3–10 GHz ultra‐wideband LNA with continuously variable gain for wireless communication

In this letter, a two‐stage low‐noise amplifier (LNA) with continuously variable gain for 3–10 GHz Ultra‐wideband (UWB) application has been realized in 65 nm CMOS technology. A self‐biased shunt resistive feedback with source inductive degeneration topology is used to achieve wideband input matching in the first stage; the inductive‐peaking technique is introduced to make the gain smooth; and common source amplifier structure is used to realize variable gain in the second stage. The LNA exhibits a continuously variable gain ranging from −13.2 dB to 16.4 dB, a minimum NF of 3.7 dB and power consumption between 11.1 mW and 16.2 mW under a 1.2 V supply voltage. Moreover, the LNA occupies silicon area of 0.12 mm 2 . © 2016 Wiley Periodicals, Inc. Microwave Opt Technol Lett 58:1697–1699, 2016