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Very‐low‐profile hybrid open‐slot/closed‐slot/inverted‐ F antenna for the LTE smartphone
Author(s) -
Wong KinLu,
Wu WanChin
Publication year - 2016
Publication title -
microwave and optical technology letters
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.304
H-Index - 76
eISSN - 1098-2760
pISSN - 0895-2477
DOI - 10.1002/mop.29863
Subject(s) - slot antenna , antenna (radio) , patch antenna , electrical engineering , casing , acoustics , microstrip antenna , engineering , materials science , physics , mechanical engineering
A very‐low‐profile hybrid antenna for the LTE smartphone was presented. The antenna structure was mainly formed by a T‐shaped open slot disposed on the main circuit board inside the smartphone casing and a metallic patch printed on the inner surface of the frame around the smartphone casing. The antenna with the T‐shape open slot and the on‐frame metallic patch had a very low profile of 3 mm. By using two feeds (low‐band and high‐band feeds) across the two arms of the T‐shape open slot and connected to the on‐frame metallic patch, hybrid resonant modes including the open‐slot antenna (OSA) mode, the closed‐slot antenna (CSA) mode, and the inverted‐F antenna (IFA) mode could be generated to form two operating bands for the LTE operation. The low band could cover the 824–960 MHz band for the LTE band 5 and 8 operation. The high band can cover the 1710–2690 MHz band for the LTE band 10, 15, and 16 operation. The techniques on exciting the hybrid resonant modes with good impedance matching for the proposed very‐low‐profile antenna were addressed in this study. Experimental data of the fabricated antenna were also presented to verify the simulation results. © 2016 Wiley Periodicals, Inc. Microwave Opt Technol Lett 58:1572–1577, 2016