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A CMOS voltage‐controlled oscillator using a cascode structure
Author(s) -
Shin Hooyoung,
Lee Milim,
Lee Changhyun,
Park Changkun
Publication year - 2016
Publication title -
microwave and optical technology letters
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.304
H-Index - 76
eISSN - 1098-2760
pISSN - 0895-2477
DOI - 10.1002/mop.29860
Subject(s) - voltage controlled oscillator , cascode , cmos , electrical engineering , transistor , voltage , electronic engineering , common gate , engineering
In this study, a cascode CMOS voltage‐controlled oscillator (VCO) to reduce the power consumption related to the RF system level and to increase the output power was proposed. The proposed VCO core consists of a cascode structure to increase the supply voltage of the VCO. To mitigate the reliability problems associated with gate‐source and gate‐drain breakdowns, the gate nodes of common‐source transistors were connected to the source nodes of common‐gate transistors. To verify the functionality of the proposed VCO, a 2.4‐GHz CMOS VCO using the 110‐nm RF CMOS process was designed. From the measured results, a relatively high output power with a 2.2 V supply voltage was obtained. © 2016 Wiley Periodicals, Inc. Microwave Opt Technol Lett 58:1560–1563, 2016