A 20.6 dBm K‐band power amplifier with 34.6% PAE in 65 nm CMOS | Zendy

Parthasarathy Ananthanarayanan | Zendy

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A 20.6 dBm K‐band power amplifier with 34.6% PAE in 65 nm CMOS

Author(s) -

Parthasarathy Ananthanarayanan

Publication year - 2016

Publication title -

microwave and optical technology letters

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 0.304

H-Index - 76

eISSN - 1098-2760

pISSN - 0895-2477

DOI - 10.1002/mop.29763

Subject(s) - dbm , amplifier , cmos , electrical engineering , cascade , rf power amplifier , power (physics) , power added efficiency , microwave , power bandwidth , linear amplifier , direct coupled amplifier , engineering , electronic engineering , materials science , optoelectronics , physics , operational amplifier , telecommunications , quantum mechanics , chemical engineering

This article presents a fully‐integrated K‐band power amplifier design approach for 5G mmWave applications. The 65nm CMOS‐based power amplifier is operated in class‐J mode, has a two‐stage cascade configuration with appropriate power cells prematch and high gain driver stage which achieves a gain of 18 dB and 20.6 dBm saturated output power (PSAT) with 34.6% power added efficiency (PAE). © 2016 Wiley Periodicals, Inc. Microwave Opt Technol Lett 58:1179–1181, 2016

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