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Systematic measurements of high isolation DC – 20 GHz miniature MEMS SPDT switch
Author(s) -
Dey Sukomal,
Koul Shiban. K.
Publication year - 2016
Publication title -
microwave and optical technology letters
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.304
H-Index - 76
eISSN - 1098-2760
pISSN - 0895-2477
DOI - 10.1002/mop.29744
Subject(s) - microelectromechanical systems , insertion loss , intermodulation , materials science , microwave , reliability (semiconductor) , electrical engineering , return loss , power (physics) , optoelectronics , electronic engineering , engineering , physics , telecommunications , amplifier , cmos , quantum mechanics , antenna (radio)
A systematic measurement procedure of high isolation single‐pole‐double‐throw (SPDT) switch utilizing six metal contact switches using micro electromechanical systems (MEMS) is presented in this paper. A complete measurement procedure of a MEMS DC‐contact is outlined here including profile analysis, mechanical, electrical, switching/release time, temperature stability, power handling, intermodulation, IIP3, S‐parameter and reliability. Measured return loss of better than 20 dB with worst case insertion loss of 1.67 dB and isolation greater than 42 dB have been experimentally obtained from the SPDT switch up to 20 GHz within 1.25 mm 2 area. Switch demonstrates temperature stability up to 70°C temperature and 0.1–1 W of RF power handling. © 2016 Wiley Periodicals, Inc. Microwave Opt Technol Lett 58:1154–1159, 2016