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Photoelectrical characteristics of TiO 2 ‐N‐SI heterostructures
Author(s) -
Kalygina V. M.,
Egorova I. S.,
Prudaev I. A.,
Tolbanov O. P.,
Atuchin V. V.
Publication year - 2016
Publication title -
microwave and optical technology letters
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.304
H-Index - 76
eISSN - 1098-2760
pISSN - 0895-2477
DOI - 10.1002/mop.29737
Subject(s) - materials science , heterojunction , annealing (glass) , microwave , sputter deposition , optoelectronics , thin film , sputtering , nanotechnology , metallurgy , telecommunications , engineering
The TiO 2 thin films have been deposited onto Si epi‐layer‐covered Si substrates by magnetron sputtering of a TiO 2 target. The influence of thermal annealing conditions on the photoelectrical characteristics of TiO 2 –n‐Si structures has been studied. The photoresistive effect is observed for the films annealed in Ar at T = 500°C and 750ºC. © 2016 Wiley Periodicals, Inc. Microwave Opt Technol Lett 58:1113–1116, 2016