Photoelectrical characteristics of TiO 2 ‐N‐SI heterostructures | Zendy

Kalygina V. M. | Zendy; Egorova I. S. | Zendy; Prudaev I. A. | Zendy; Tolbanov O. P. | Zendy; Atuchin V. V. | Zendy

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Photoelectrical characteristics of TiO 2 ‐N‐SI heterostructures

Author(s) -

Kalygina V. M.,

Egorova I. S.,

Prudaev I. A.,

Tolbanov O. P.,

Atuchin V. V.

Publication year - 2016

Publication title -

microwave and optical technology letters

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 0.304

H-Index - 76

eISSN - 1098-2760

pISSN - 0895-2477

DOI - 10.1002/mop.29737

Subject(s) - materials science , heterojunction , annealing (glass) , microwave , sputter deposition , optoelectronics , thin film , sputtering , nanotechnology , metallurgy , telecommunications , engineering

The TiO 2 thin films have been deposited onto Si epi‐layer‐covered Si substrates by magnetron sputtering of a TiO 2 target. The influence of thermal annealing conditions on the photoelectrical characteristics of TiO 2 –n‐Si structures has been studied. The photoresistive effect is observed for the films annealed in Ar at T = 500°C and 750ºC. © 2016 Wiley Periodicals, Inc. Microwave Opt Technol Lett 58:1113–1116, 2016

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