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K band class‐C MESFET based frequency quadrupler with highly selective SIW bandpass filter for inter satellite communication
Author(s) -
Patel Romil,
Patel Amit
Publication year - 2016
Publication title -
microwave and optical technology letters
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.304
H-Index - 76
eISSN - 1098-2760
pISSN - 0895-2477
DOI - 10.1002/mop.29661
Subject(s) - mesfet , frequency multiplier , harmonics , band pass filter , electronic engineering , microwave , electrical engineering , engineering , dbc , voltage , transistor , telecommunications , field effect transistor , cmos
This article presents the single stage active frequency quadrupler design for generating a tone in the K band (23.5 GHz) frequency range using GaAs MESFET device. Harmonics current generation characteristics of GaAs MESFET (NE9) is modeled and analyzed in reference with gate voltage. Based on this, its optimum operating class‐C is decided for its application as a frequency quadrupler. Using this model and introducing resonator (Idler) based harmonic rejection techniques, a narrowband −0.310 dBm output power ×4 frequency multiplier from C‐band to K‐band implemented using 0.5 μm GaAs MESFET. As the device operated in class‐C operating condition, it produces harmonics content due to clipping of output signal. At the output of the proposed multiplier design, a highly selective surface integrated waveguide (SIW) based bandpass filter (with Q is better than 120) is attached, which provides excellent rejection of fundamental component (>90 dBc) and other harmonics assuring minimum rejection of 30 dBc. The proposed design consumes 60 mW power and provides ∼−7 dB conversion gain with input power having 7 dBm. Feasibility and layout geometry of the proposed design has been evaluated and simulated on the substrate RT‐Duroid5880 using Agilent ADS software. © 2016 Wiley Periodicals, Inc. Microwave Opt Technol Lett 58:767–776, 2016