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Triple‐band oscillator with two shunt fourth‐order LC resonators
Author(s) -
Jang ShengLyang,
Huang LiYu,
Hsue ChingWen
Publication year - 2016
Publication title -
microwave and optical technology letters
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.304
H-Index - 76
eISSN - 1098-2760
pISSN - 0895-2477
DOI - 10.1002/mop.29620
Subject(s) - pierce oscillator , resonator , vackář oscillator , electrical engineering , microwave , cmos , optoelectronics , electronic oscillator , physics , voltage controlled oscillator , parametric oscillator , telecommunications , materials science , engineering , voltage
This letter presents a triple‐band (TB) oscillator using two 4 th order LC resonator to form a 6 th order resonator. The TB cross‐coupled oscillator two pairs of back‐to‐back varactors for band switching and it has been implemented with CMOS devices in the TSMC 0.18μm SiGe 3P6M BiCMOS technology. The core power consumption of the high (middle, low)‐band core oscillator are 2.25(2.33, 2.58) mA and 1.8(1.86, 2.06) mW, respectively at the dc drain‐source bias of 0.8V. The oscillator can generate differential signals in the frequency range of 8.44–8.71GHz, 6.74–6.86GHz, and 4.22–4.47 GHz. © 2015 Wiley Periodicals, Inc. Microwave Opt Technol Lett 58:580–583, 2016