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A high‐power, broadband 245–285 GHz balanced frequency doubler in 45 nm SOI CMOS
Author(s) -
Abbasi Morteza,
Ricketts David S.
Publication year - 2016
Publication title -
microwave and optical technology letters
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.304
H-Index - 76
eISSN - 1098-2760
pISSN - 0895-2477
DOI - 10.1002/mop.29586
Subject(s) - broadband , bandwidth (computing) , frequency multiplier , cmos , electrical engineering , microwave , silicon on insulator , optoelectronics , engineering , terahertz radiation , usable , materials science , electronic engineering , telecommunications , computer science , silicon , world wide web
A compact, broadband balanced frequency doubler that achieves state‐of‐the‐art output power with a usable bandwidth of over 40 GHz (245–285 GHz) has been presented. This wide bandwidth is twice that of previously published CMOS doublers from 140 to 340 GHz, enabling emerging applications in wide bandwidth communication and radar at sub‐THz frequencies. The doubler is designed and fabricated in a 45 nm SOI CMOS technology with an effective area of only 0.12 mm 2 . The frequency doubler exhibits −15 ± 1.5 dB conversion loss over 40 GHz bandwidth and can provide as high as 200 μW power while consuming 19 ± 1 mW dc power from a 1.1 V supply. © 2016 Wiley Periodicals, Inc. Microwave Opt Technol Lett 58:423–426, 2016