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V‐band 18.3 dB/1.6 dBm three‐stage amplifier with inductive self‐biasing in 130‐nm CMOS
Author(s) -
Zhang Mingming,
Wu HsienShun,
Tzuang ChingKuang C.
Publication year - 2016
Publication title -
microwave and optical technology letters
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.304
H-Index - 76
eISSN - 1098-2760
pISSN - 0895-2477
DOI - 10.1002/mop.29575
Subject(s) - biasing , dbm , amplifier , cmos , electrical engineering , impedance matching , transmission line , microwave , electrical impedance , power (physics) , electronic engineering , voltage , materials science , engineering , optoelectronics , physics , telecommunications , quantum mechanics
The common source amplifier design with the inductive self‐biasing is presented. The proposed design can establish the biasing and the impedance matching with two transmission line elements. Both theoretical and experimental verifications confirm that the three‐stage prototype achieves a gain per stage of 6.1 dB, and the output P 1dB of 1.6 dBm with 29 mW power consumption at 53 GHz based on the standard CMOS 130 nm 1P8M technology. © 2016 Wiley Periodicals, Inc. Microwave Opt Technol Lett 58:409–413, 2016