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Design of a dual‐band sequential power amplifier
Author(s) -
Shao Jin,
Ren Han,
Zhou Mi,
Arigong Bayaner,
Ding Jun,
Fu Song,
Kim Hyoungsoo,
Zhang Hualiang
Publication year - 2016
Publication title -
microwave and optical technology letters
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.304
H-Index - 76
eISSN - 1098-2760
pISSN - 0895-2477
DOI - 10.1002/mop.29508
Subject(s) - amplifier , flatness (cosmology) , electrical engineering , power dividers and directional couplers , power bandwidth , rf power amplifier , dbm , power added efficiency , power (physics) , fully differential amplifier , linear amplifier , engineering , combing , multi band device , direct coupled amplifier , microwave , materials science , physics , telecommunications , operational amplifier , cmos , cosmology , quantum mechanics , antenna (radio) , composite material
In this article, we present a dual‐band sequential power amplifier (SPA) to provide high efficiency at power back‐offs and maximum output power at two separate working frequencies. The proposed SPA, including a carrier amplifier, a peaking amplifier, a power divider, and a combing coupler, is fabricated on Isola I‐TeraMTRF boards with 3.45 dielectric constant, 0.0028 loss tangent, and 0.508 mm substrate thickness. The SPA provides 48 and 62% drain efficiency (DE) at 6 dB output back‐ off (OBO) and maximum output power at 1.1 GHz (first design frequency), and it also provides 52 and 65% DE at 6 dB OBO and maximum output power at 1.5 GHz (second design frequency). The designed SPA achieves above 39 dBm output powers at two working frequencies with about 10 dB gain and ±1.3 dB gain flatness. To the best of the authors’ knowledge, it is the first time that a dual‐band SPA is reported and demonstrated experimentally. © 2016 Wiley Periodicals, Inc. Microwave Opt Technol Lett 58:99–102, 2016