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Fabrication and small signal modeling of 0.5 μm InGaAs/InP DHBT demonstrating F T / F max of 350/532 GHz
Author(s) -
Niu Bin,
Wang Yuan,
Cheng Wei,
Xie ZiLi,
Lu HaiYan,
Sun Yan,
Xie JunLing,
Chen TangSheng
Publication year - 2015
Publication title -
microwave and optical technology letters
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.304
H-Index - 76
eISSN - 1098-2760
pISSN - 0895-2477
DOI - 10.1002/mop.29433
Subject(s) - heterojunction bipolar transistor , laser linewidth , wafer , microwave , signal (programming language) , common emitter , optoelectronics , materials science , heterojunction , indium phosphide , equivalent circuit , fabrication , bipolar junction transistor , monolithic microwave integrated circuit , electrical engineering , gallium arsenide , transistor , physics , telecommunications , engineering , optics , computer science , voltage , alternative medicine , cmos , amplifier , laser , pathology , programming language , medicine
An InGaAs/InP three mesa double heterojunction bipolar transistor demonstrating f t /f max of 350/532 GHz was fabricated on 3 inch wafer with a 0.5 μm emitter and a composite collector. Base resistance R bb of around 19 Ω was achieved to sustain a relative high f max in 0.5 μm linewidth device. Small signal equivalent circuit model was established, and good agreement between measured and simulated values was achieved. Effects of some key parameters were analyzed based on simulated small signal equivalent circuit model. © 2015 Wiley Periodicals, Inc. Microwave Opt Technol Lett 57:2774–2778, 2015