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Wide‐locking range single‐injection divide‐by‐3 injection‐locked frequency divider
Author(s) -
Jang ShengLyang,
Lin GuanYu
Publication year - 2015
Publication title -
microwave and optical technology letters
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.304
H-Index - 76
eISSN - 1098-2760
pISSN - 0895-2477
DOI - 10.1002/mop.29431
Subject(s) - frequency divider , electrical engineering , cmos , microwave , materials science , resonator , signal (programming language) , transistor , optoelectronics , injection locking , voltage , power (physics) , engineering , electronic engineering , physics , telecommunications , optics , computer science , laser , quantum mechanics , programming language
This letter presents a wide‐locking range CMOS divide‐by‐3 injection‐locked frequency dividers (ILFD) using single‐ended injection signal. The fabricated 0.18 μm CMOS ÷3 ILFD uses cross‐coupled switching transistors, single‐injection MOSFET, and a dual‐resonance RLC resonator. The consumed power of the ÷3 ILFD core is 7.97 mW at the DC drain‐source voltage 0.76 V. At an external injected signal power P inj = 0 dBm, the measured locking range is 2.97 GHz (25.25%) from 10.28 to 13.25 GHz and the operation range is 5.17 GHz (48.5%) from 8.08 to 13.25 GHz. © 2015 Wiley Periodicals, Inc. Microwave Opt Technol Lett 57:2720–2723, 2015
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