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Phase shifter designing base on half mode substrate integrated waveguide with reconfigurable quality
Author(s) -
Kuhestani Hamed,
NaserMoghadasi Mohammad,
Maleki Mahshid,
Zarrabi Ferdows B.
Publication year - 2015
Publication title -
microwave and optical technology letters
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.304
H-Index - 76
eISSN - 1098-2760
pISSN - 0895-2477
DOI - 10.1002/mop.29399
Subject(s) - phase shift module , pin diode , transmission line , materials science , microwave , optoelectronics , reactance , bandwidth (computing) , electrical engineering , phase (matter) , metamaterial , waveguide , engineering , diode , insertion loss , electronic engineering , telecommunications , physics , voltage , quantum mechanics
ABSTRACT In this article, a novel phase shifter base on half mode substrate integrated waveguide (HMSIW) whose characteristics can be reconfigured electronically by simply loading it with electromagnetic bandgap (EBG) unit cells at 9.5 GHz is presented. The prototype of phase shifter contains a HMSIW as a transmission line and four metamaterial structure as a load on the one side of the transmission line. These loads with junctions (or PIN diode) can be connected to HMSIW. To obtain different radar bit‐phases for S 21 , we change the situation of junctions (or PIN diode). For demonstration purposes, controllable phase shifters are designed, fabricated, and measured to give excellent performance for X‐band applications. The phase shifter has bandwidth around 0.38% at 9.55 GHz. Design method is based on simulation of EBG cells in different position and changing reactance of the phase shifting elements which help us to modify our phase shifter for different phases. © 2015 Wiley Periodicals, Inc. Microwave Opt Technol Lett 55:2562–2567, 2015