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A wideband BiCMOS thermal noise canceling low noise amplifier with temperature compensation
Author(s) -
Lu Zheng Hao,
Yu Xiao Peng,
Yeo Kiat Seng,
Lim Wei Meng
Publication year - 2015
Publication title -
microwave and optical technology letters
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.304
H-Index - 76
eISSN - 1098-2760
pISSN - 0895-2477
DOI - 10.1002/mop.29285
Subject(s) - bicmos , electrical engineering , low noise amplifier , noise figure , wideband , y factor , electronic engineering , cmos , amplifier , effective input noise temperature , noise temperature , biasing , engineering , materials science , voltage , transistor , phase noise
A BiCMOS wideband thermal noise canceling low noise amplifier is presented. This BiCMOS design can achieve significant power consumption reduction comparing to the pure CMOS implementation with the same topology. A novel temperature compensation biasing circuit is also proposed for this BiCMOS noise canceling LNA topology to achieve relatively temperature independent gain. Realized in Tower Jazz 0.18 μm SiGe technology, the measured S 21 of the proposed LNA is 17.8 dB with a −3dB bandwidth of 3.3 GHz at room temperature. The measured gain variation from −40 to + 80°C is within ± 0.4 dB. The measured minimum noise figure at room temperature is 1.9 dB when matched to 50 Ω. The chip consumes about 0.2 × 0.3 mm 2 area excluding pads and dissipates about 8 mA DC current from a single 1.8 V supply. © 2015 Wiley Periodicals, Inc. Microwave Opt Technol Lett 57:2121–2125, 2015