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The effect of the gate‐drain distance on high frequency and noise performance for AlGaN/GaN HEMT
Author(s) -
Shen Li,
Chen Bo,
Sun Ling,
Gao Jianjun
Publication year - 2015
Publication title -
microwave and optical technology letters
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.304
H-Index - 76
eISSN - 1098-2760
pISSN - 0895-2477
DOI - 10.1002/mop.29256
Subject(s) - high electron mobility transistor , materials science , optoelectronics , noise (video) , noise figure , microwave , wafer , transistor , electrical engineering , engineering , telecommunications , computer science , cmos , amplifier , voltage , artificial intelligence , image (mathematics)
The influence of the gate‐drain distance on high frequency and noise performance of AlGaN/GaN high electron mobility transistors (HEMT) is investigated in this article. AlGaN/GaN HEMTs with three different gate‐drain separation structures are fabricated using 0.25 μm gatelength process, and a detailed comparative study on their device performances is performed. Small signal model parameters are determined from S‐parameter on‐wafer measurement up to 40 GHz, and the noise parameters are determined up to 18 GHz based on 50 Ω noise figure on‐wafer measurement system. The variation of intrinsic small signal model parameters and noise model parameters with different gate‐drain separation is studied. © 2015 Wiley Periodicals, Inc. Microwave Opt Technol Lett 57:2020–2023, 2015