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Experimental research on silicon carbide photoconductive semiconductor switch
Author(s) -
Sun Yanling,
Yang Meng,
Song Chaoyang,
Guo Hui,
Jiang Shuqing
Publication year - 2015
Publication title -
microwave and optical technology letters
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.304
H-Index - 76
eISSN - 1098-2760
pISSN - 0895-2477
DOI - 10.1002/mop.29238
Subject(s) - silicon carbide , materials science , optoelectronics , voltage , semiconductor , photoconductivity , microwave , biasing , pulse (music) , optical switch , high voltage , semiconductor device , silicon , electrical engineering , engineering , telecommunications , nanotechnology , layer (electronics) , metallurgy
Silicon carbide photoconductive semiconductor switches with the good performance of breakdown voltage above 10 kV and ∼16‐Ω minimum on‐resistance are fabricated and tested. A good electrical pulse output is obtained when the switch is triggered by optical pulses. The output performances with different bias voltages are discussed, and the results indicate that the nonlinear output will not occur with the bias voltage increasing. The effects of bias voltage and optical pulse energy on the on‐resistance are investigated. The performance of different switch samples is compared. © 2015 Wiley Periodicals, Inc. Microwave Opt Technol Lett 57:1946–1948, 2015