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A 3 mW 54 GHz 0.18 μm BiCMOS voltage controlled oscillator with supply injection locking
Author(s) -
Yu Xiao Peng,
Li Y. B.,
Lim Wei Meng,
Yeo Kiat Seng
Publication year - 2015
Publication title -
microwave and optical technology letters
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.304
H-Index - 76
eISSN - 1098-2760
pISSN - 0895-2477
DOI - 10.1002/mop.29222
Subject(s) - electrical engineering , injection locking , voltage , microwave , engineering , power (physics) , bicmos , materials science , optoelectronics , physics , transistor , telecommunications , optics , laser , quantum mechanics
The key considerations of low power injection‐locked oscillator (ILO) are analyzed. Using a supply injection topology, the proposed ILO is able to work at lower supply voltage with a good balance of other performances. Fabricated in Tower JAZZ 0.18 μm SiGe BiCMOS technology, a prototype of ILO with supply injection achieves an operating frequency ranges from 53.2 to 55.3 GHz with a minimum input power of −35 dBm for a fixed control voltage. Occupying a silicon area of 0.24 mm 2 , the core circuit consumes 3 mW from a 0.7 V power supply. © 2015 Wiley Periodicals, Inc. Microwave Opt Technol Lett 57:1912–1914, 2015
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