z-logo
Premium
A −187.7‐FoM V‐band low‐power CMOS VCO using modified f T ‐doubler with current‐reused technique
Author(s) -
Chen JianYing,
Chou HungTing,
Chiou HwannKaeo
Publication year - 2015
Publication title -
microwave and optical technology letters
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.304
H-Index - 76
eISSN - 1098-2760
pISSN - 0895-2477
DOI - 10.1002/mop.29179
Subject(s) - dbc , voltage controlled oscillator , phase noise , voltage doubler , electrical engineering , cmos , frequency multiplier , power consumption , figure of merit , offset (computer science) , microwave , extremely high frequency , voltage , v band , materials science , power (physics) , optoelectronics , engineering , physics , telecommunications , voltage reference , computer science , programming language , quantum mechanics , dropout voltage
A modified f T ‐doubler with current‐reused technique is proposed to realize a low power and low phase noise V‐band voltage controlled oscillator (VCO) in a standard 1P9M 90‐nm CMOS. The proposed technique not only increases the operation frequency but also reduces the DC power consumption at millimeter‐wave frequencies. The short circuit unity gain frequency f T of the modified f T ‐doubler yields a 31% improvement compared to that of conventional one. Measurement result shows that the designed VCO achieves a phase noise of −115.4 dBc/Hz at 10‐MHz offset under a low power consumption of 2 mW. The figure‐of‐merit is up to −187.7 dBc/Hz. © 2015 Wiley Periodicals, Inc. Microwave Opt Technol Lett 57:1752–1755, 2015

This content is not available in your region!

Continue researching here.

Having issues? You can contact us here
Accelerating Research

Address

John Eccles House
Robert Robinson Avenue,
Oxford Science Park, Oxford
OX4 4GP, United Kingdom