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A −187.7‐FoM V‐band low‐power CMOS VCO using modified f T ‐doubler with current‐reused technique
Author(s) -
Chen JianYing,
Chou HungTing,
Chiou HwannKaeo
Publication year - 2015
Publication title -
microwave and optical technology letters
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.304
H-Index - 76
eISSN - 1098-2760
pISSN - 0895-2477
DOI - 10.1002/mop.29179
Subject(s) - dbc , voltage controlled oscillator , phase noise , voltage doubler , electrical engineering , cmos , frequency multiplier , power consumption , figure of merit , offset (computer science) , microwave , extremely high frequency , voltage , v band , materials science , power (physics) , optoelectronics , engineering , physics , telecommunications , voltage reference , computer science , programming language , quantum mechanics , dropout voltage
A modified f T ‐doubler with current‐reused technique is proposed to realize a low power and low phase noise V‐band voltage controlled oscillator (VCO) in a standard 1P9M 90‐nm CMOS. The proposed technique not only increases the operation frequency but also reduces the DC power consumption at millimeter‐wave frequencies. The short circuit unity gain frequency f T of the modified f T ‐doubler yields a 31% improvement compared to that of conventional one. Measurement result shows that the designed VCO achieves a phase noise of −115.4 dBc/Hz at 10‐MHz offset under a low power consumption of 2 mW. The figure‐of‐merit is up to −187.7 dBc/Hz. © 2015 Wiley Periodicals, Inc. Microwave Opt Technol Lett 57:1752–1755, 2015