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Implementation of veriloga GaN HEMT model to design RF switch
Author(s) -
Majumdar Shubhankar,
Bag Ankush,
Biswas Dhrubes
Publication year - 2015
Publication title -
microwave and optical technology letters
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.304
H-Index - 76
eISSN - 1098-2760
pISSN - 0895-2477
DOI - 10.1002/mop.29152
Subject(s) - high electron mobility transistor , microwave , cadence , insertion loss , optoelectronics , radio frequency , materials science , electrical engineering , rf switch , gallium nitride , engineering , electronic engineering , telecommunications , transistor , voltage , nanotechnology , layer (electronics)
GaN HEMT model has been implemented in designing of RF switch through VerilogA. The VerilogA model is formed by experimental data as obtained from DC and RF characteristics of the HEMT. A look‐up‐table based VerilogA model has been prepared to simulate the RF switch in Cadence's spectre. The simulated value of the switch property i.e. isolation and insertion loss is found to be −40 dB to −35 dB and −0.5 dB to −2.5 dB, respectively in the 0.5–2.5 GHz frequency range. © 2015 Wiley Periodicals, Inc. Microwave Opt Technol Lett 57:1765–1768, 2015