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Low‐power Ka band injection‐locked frequency dividers using distributed LC tanks
Author(s) -
Tran Cong Ha,
Kim SeungYeon,
Lee JongWook
Publication year - 2015
Publication title -
microwave and optical technology letters
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.304
H-Index - 76
eISSN - 1098-2760
pISSN - 0895-2477
DOI - 10.1002/mop.29091
Subject(s) - frequency divider , electrical engineering , dbc , phase noise , capacitance , lc circuit , engineering , negative resistance , inductor , transistor , materials science , ka band , varicap , phase locked loop , optoelectronics , cmos , voltage , capacitor , physics , electrode , quantum mechanics
This article presents low‐power injection‐locked frequency dividers (ILFD) operating in the Ka band. To achieve low‐power operation, we use two circuit techniques to reduce the effects of the capacitance and resistance. To achieve a high oscillation frequency by reducing the effective capacitance, a distributed LC tank with a split auxiliary negative‐g m cell is used. To achieve a high loop gain for a given power, we reduce the gate resistance by modifying the foundry‐provided transistor layout. Two versions of the divider, which have different inductor implementations, are fabricated in 1‐poly 9‐metal 65‐nm low‐power RFCMOS. When biased at 1 V and 1 mA, the ILFD shows successful injection locking at 34 GHz with −35 dBm input power. When biased at 1.2 V and 3 mA, the input frequency ranges from 32.3 to 34.6 GHz at 5 dBm input power. Good phase noise spectral density of −126.6 and −132.0 dBc/Hz at a 1‐MHz offset is achieved. © 2015 Wiley Periodicals, Inc. Microwave Opt Technol Lett 57:1379–1383, 2015