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A fundamental OOK modulator for 340 GH z communication using 0.13 μm CMOS technology
Author(s) -
Deng XiaoDong,
Li Yihu,
Wu Wen,
Xiong YongZhong
Publication year - 2015
Publication title -
microwave and optical technology letters
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.304
H-Index - 76
eISSN - 1098-2760
pISSN - 0895-2477
DOI - 10.1002/mop.29038
Subject(s) - cmos , microwave , electrical engineering , inductor , electronic engineering , engineering , materials science , optoelectronics , topology (electrical circuits) , telecommunications , voltage
This letter presents a 340 GHz fundamental on–off keying modulator using 0.13 μm CMOS technology. The proposed modulator topology is composed of a 90° hybrid coupler and two series loads formed by a series inductor and a MOSFET for 340 GHz on‐/off‐state switching. The measured results indicate that the insertion loss is ∼4.9 dB on average and the isolation is better than 13 dB from 330 to 347 GHz. A measured data rate of 2.5 Gb/s is demonstrated at the carrier frequency of 340 GHz. © 2015 Wiley Periodicals, Inc. Microwave Opt Technol Lett 57:1166–1168, 2015
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