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An improved DC model for AlGaN/GaN HEMTs
Author(s) -
Shen Li,
Chen Bo,
Sun Ling,
Luo Danting,
Gao Jianjun
Publication year - 2015
Publication title -
microwave and optical technology letters
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.304
H-Index - 76
eISSN - 1098-2760
pISSN - 0895-2477
DOI - 10.1002/mop.29008
Subject(s) - high electron mobility transistor , microwave , materials science , transistor , optoelectronics , voltage , gallium nitride , electrical engineering , engineering , nanotechnology , telecommunications , layer (electronics)
An Improved empirical model for the DC I‐V characteristics of a GaN High electron mobility transistor (HEMT) is presented in this article. The improvement consists in allowing the Curtice model parameters to vary with gate‐source voltage. Model parameter extraction is made for a 100 μm gate‐width GaN HEMT. A good agreement is obtained between modeled results and measured results. © 2015 Wiley Periodicals, Inc. Microwave Opt Technol Lett 57:1027–1029, 2015