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Design of dual‐band gan doherty power amplifier using a simplified structure
Author(s) -
Shao Jin,
Zhou Rongguo,
Yoon SangWoong,
Fu Song,
Kim Hyoungsoo,
Zhang Hualiang
Publication year - 2015
Publication title -
microwave and optical technology letters
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.304
H-Index - 76
eISSN - 1098-2760
pISSN - 0895-2477
DOI - 10.1002/mop.28995
Subject(s) - amplifier , multi band device , broadband , impedance matching , electrical impedance , microwave , electrical engineering , materials science , power (physics) , offset (computer science) , optoelectronics , engineering , electronic engineering , computer science , telecommunications , physics , cmos , quantum mechanics , antenna (radio) , programming language
In this article, we present a simplified Doherty power amplifier (DPA) architecture for the easy implementation of dual‐band operation. The proposed DPA structure eliminates the 35 Ω quarter wavelength impedance inverters used in the conventional DPAs by matching the output impedances of the carrier and peak amplifiers of the DPA to other values (e.g., 100 Ω). The electrical lengths of the offset line and the phase compensation line are carefully chosen to enhance the Doherty effect (high efficiency at back‐off power level) at two assigned frequency bands. Broadband matching networks are also designed to increase the operation bandwidths at the two designed bands. To prove the design concept, a dual‐band DPA is designed and measured. In the first frequency band (550–650 MHz), the designed DPA provides 60.6–76.3% drain efficiency (DE) at full output power, 46–54.9% DE at 6 dB of output power back‐off (OBO); in the second frequency band (950–1050 MHz), the designed DPA provides 51.4–61.2% DE at full output power, 35–38% DE at 6 dB of OBO. © 2015 Wiley Periodicals, Inc. Microwave Opt Technol Lett 57:953–956, 2015