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A full X‐band CMOS amplifier with wideband class‐E harmonic matching
Author(s) -
Park Seungwon,
Jeon Sanggeun
Publication year - 2015
Publication title -
microwave and optical technology letters
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.304
H-Index - 76
eISSN - 1098-2760
pISSN - 0895-2477
DOI - 10.1002/mop.28927
Subject(s) - wideband , amplifier , electrical engineering , bandwidth (computing) , cmos , rf power amplifier , dbm , power added efficiency , power bandwidth , electronic engineering , harmonic , d band , impedance matching , engineering , physics , telecommunications , optics , electrical impedance , acoustics , raman spectroscopy
A fully integrated medium power amplifier operating over the entire X‐band is demonstrated in a 0.11‐μm CMOS technology. A double‐resonance technique is used for wideband input matching. At the output load, wideband class‐E harmonic matching is performed for up to the third harmonic frequency to achieve high output power and efficiency. The amplifier exhibits measured small‐signal gain exceeding 7.6 dB over a wide 3‐dB bandwidth from 7.6 to 13.7 GHz. The output power and power added efficiency (PAE) are higher than 10.7 dBm and 15%, respectively, at the entire X‐band (8–12 GHz). The peak PAE is 20.2% with an output power of 12.4 dBm at 10 GHz. © 2015 Wiley Periodicals, Inc. Microwave Opt Technol Lett 57:645–649, 2015