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A W‐band power detector RFIC design in 0.13 μm SiGe BiCMOS process
Author(s) -
Jonsson Rolf,
Reyaz Shakila Bint,
Malmqvist Robert,
Kaynak Mehmet
Publication year - 2015
Publication title -
microwave and optical technology letters
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.304
H-Index - 76
eISSN - 1098-2760
pISSN - 0895-2477
DOI - 10.1002/mop.28861
Subject(s) - rfic , detector , bicmos , responsivity , noise equivalent power , optoelectronics , electrical engineering , w band , d band , broadband , wideband , microwave , materials science , bandwidth (computing) , physics , engineering , cmos , telecommunications , optics , transistor , voltage , raman spectroscopy
This article presents the results of a wideband power detector radio frequency integrated circuit design intended for W‐band passive imaging sensors. The power detector was fabricated in a 0.13 µm SiGe BiCMOS process technology with 300 GHz/500 GHz f T /f max . The experimental results show broadband RF properties such as a responsivity of 40–60 kV/W and a noise equivalent power (NEP) of 0.3–0.4 pW/Hz 1/2 at 70–95 GHz, respectively (the DC power consumption is 225 µW). To the authors' best knowledge, the SiGe detector design reports the widest s 11 −10 dB bandwidth (s 11 ≤ −10 dB at 79–102 GHz) among silicon based W‐band power detectors and is competitive with InP‐based W‐band detectors in terms of a higher responsivity and similar NEP. © 2015 Wiley Periodicals, Inc. Microwave Opt Technol Lett 57:414–417, 2015