Premium
On wafer thermal characterization of miniature gallium arsenide microcoolers with thermal loading from DC probes
Author(s) -
Glover J.,
Khalid A.,
Cumming D. R. S.,
Bajo M. Montes,
Kuball M.,
Stephen A.,
Dunn G. M.,
Oxley C. H.
Publication year - 2014
Publication title -
microwave and optical technology letters
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.304
H-Index - 76
eISSN - 1098-2760
pISSN - 0895-2477
DOI - 10.1002/mop.28681
Subject(s) - gallium arsenide , wafer , materials science , optoelectronics , microwave , indium gallium arsenide , thermal , anode , aluminium , gallium , indium arsenide , cathode , electrical engineering , electrode , composite material , metallurgy , chemistry , engineering , telecommunications , physics , meteorology
Miniature aluminium gallium arsenide/gallium arsenide (AlGaAs/GaAs) coolers were fabricated on wafer, enabling different contact geometries to be realized in the same process run. To individually DC bias the microcooler, microprobes were used leading to thermal loading of the cooler. A simple experimental technique was developed to verify the temperature difference (ΔT) between the cold cathode and hot anode contacts is due to cooling rather than heating of the cooler. © 2014 Wiley Periodicals, Inc. Microwave Opt Technol Lett 56:2699–2700, 2014