Premium
Efficient RF extrinsic parameters extraction technique for finfets
Author(s) -
Maafri Djabar,
Yagoub Mustapha C. E.,
Touhami Rachida,
Slimane Abdelhalim,
Belaroussi Mohand Tahar
Publication year - 2014
Publication title -
microwave and optical technology letters
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.304
H-Index - 76
eISSN - 1098-2760
pISSN - 0895-2477
DOI - 10.1002/mop.28662
Subject(s) - microwave , electronic engineering , transistor , extraction (chemistry) , materials science , signal (programming language) , range (aeronautics) , optoelectronics , electrical engineering , computer science , engineering , chemistry , telecommunications , chromatography , voltage , composite material , programming language
Small signal RF modeling of FinFETs is strongly dependent on the methodology used to extract transistor intrinsic and extrinsic parameters. In this article, an original extraction method is proposed for determining all FinFET extrinsic series elements values from S‐parameters measurements at zero bias condition. The extracted technique is demonstrated through successful comparison between simulated and measured S‐parameters over a widefrequency range. © 2014 Wiley Periodicals, Inc. Microwave Opt Technol Lett 56:2616–2619, 2014