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A directional method of extrinsic resistance determination for millimeter‐wave small‐signal model
Author(s) -
Nguyen Tung TheLam,
Kim SamDong
Publication year - 2014
Publication title -
microwave and optical technology letters
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.304
H-Index - 76
eISSN - 1098-2760
pISSN - 0895-2477
DOI - 10.1002/mop.28649
Subject(s) - transistor , microwave , extremely high frequency , signal (programming language) , extraction (chemistry) , materials science , range (aeronautics) , millimeter , electronic engineering , optoelectronics , computational physics , electrical engineering , physics , engineering , computer science , optics , chemistry , telecommunications , chromatography , voltage , composite material , programming language
We propose in this study an approach to highly reliable extraction scheme for the extrinsic resistances of the W‐band metamorphic high electron mobility transistors. This method uses a directional search technique to determine the channel resistance of the device under zero‐biased condition by minimizing the fitting errors between hot field effect transistor model S‐parameters and measurements. From this, the extraction accuracies of the extrinsic resistances and all intrinsic parameters are greatly improved. Extractions for the parasitic elements are performed at four different gate widths (2 × 10 µm, 2 × 20 µm, 2 × 30 µm, and 2 × 70 µm), and we achieved the most accurate parameter prediction among the small‐signal models reported to date with an effective fitting error of 10.69% in a frequency range of 0.5–110 GHz. © 2014 Wiley Periodicals, Inc. Microwave Opt Technol Lett 56:2609–2612, 2014