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Electromagnetic simulation of VLSI circuits by the modified ADI‐FDTD method
Author(s) -
Hwang JiunnNan,
Chen FuChiarng
Publication year - 2014
Publication title -
microwave and optical technology letters
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.304
H-Index - 76
eISSN - 1098-2760
pISSN - 0895-2477
DOI - 10.1002/mop.28643
Subject(s) - finite difference time domain method , very large scale integration , stability (learning theory) , electronic engineering , perfectly matched layer , electronic circuit , interconnection , computer science , time domain , domain (mathematical analysis) , microwave , mathematics , engineering , physics , electrical engineering , mathematical analysis , telecommunications , optics , machine learning , computer vision
The alternating direction implicit (ADI) finite‐difference time‐domain (FDTD) method can be used to simulate very large scale integration (VLSI) circuits efficiently as the time step is not restricted by the Courant–Friedrich–Levy stability condition. When the Berenger's split‐field perfectly matched layer (PML) absorbing boundary condition is used for the ADI‐FDTD method for open region simulation, the PML implementation will make this scheme unstable. In this article, the modified PML conductivity profiles are proposed to improve the stability of this scheme. Numerical simulations of the VLSI interconnect and RF inductor in time domain and frequency domain will be demonstrated to show the efficiency and accuracy of this method. © 2014 Wiley Periodicals, Inc. Microwave Opt Technol Lett 56:2530–2534, 2014