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A 26–47.9 GHz ultrawideband CMOS dual injection‐locked frequency divider
Author(s) -
Liu Faen,
Wang Zhigong,
Li Zhiqun,
Li Qin,
Yang Geliang
Publication year - 2014
Publication title -
microwave and optical technology letters
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.304
H-Index - 76
eISSN - 1098-2760
pISSN - 0895-2477
DOI - 10.1002/mop.28536
Subject(s) - frequency divider , nmos logic , pmos logic , cmos , electrical engineering , transistor , voltage divider , materials science , electrical impedance , microwave , frequency multiplier , voltage , optoelectronics , engineering , electronic engineering , telecommunications
A 26–47.9 GHz ultrawideband CMOS dual injection‐locked frequency divider (dual‐ILFD) with high input impedance is demonstrated. As the differential input signal is injected into the gate of the PMOS tail transistor and NMOS switch transistor, the proposed divider has high input impedance and can be driven easily by the preceding driving circuits. Meanwhile, the locking range of the proposed divider is extended significantly by fully utilizing the dual‐injection technique. The proposed dual‐ILFD is fabricated in a standard 90‐nm CMOS process and on‐wafer measurements are performed. The measurements show that the free‐running frequency of the divider is 19.11 GHz. At an incident power of 0 dBm, a total locking range from 26 to 47.9 GHz is achieved. The power consumption is 2.88 mW at a supply voltage of 1.2 V. The total chip size is 0.62 × 0.42 mm 2 . © 2014 Wiley Periodicals, Inc. Microwave Opt Technol Lett 56:2126–2129, 2014