A highly tunable microwave oscillator based on MTJ STO technology | Zendy

Chen T. | Zendy; Dürrenfeld P. | Zendy; Rodriguez S. | Zendy; Åkerman J. | Zendy; Rusu A. | Zendy

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A highly tunable microwave oscillator based on MTJ STO technology

Author(s) -

Chen T.,

Dürrenfeld P.,

Rodriguez S.,

Åkerman J.,

Rusu A.

Publication year - 2014

Publication title -

microwave and optical technology letters

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 0.304

H-Index - 76

eISSN - 1098-2760

pISSN - 0895-2477

DOI - 10.1002/mop.28511

Subject(s) - microwave , amplifier , voltage controlled oscillator , pierce oscillator , cmos , electrical engineering , tunnel magnetoresistance , wideband , vackář oscillator , optoelectronics , materials science , local oscillator , radio frequency , engineering , telecommunications , nanotechnology , layer (electronics) , voltage

This article presents a fully ESD‐protected, highly tunable microwave oscillator based on magnetic tunnel junction (MTJ) spin torque oscillator (STO) technology. The oscillator consists of a compact MTJ STO and a 65 nm CMOS wideband amplifier, which amplifies the RF signal of the MTJ STO to a level that can be used to drive a PLL. The (MTJ STO + amplifier IC) pair shows a measured quality factor (Q) of 170 and a wide tunability range from 3 to 7 GHz, which demonstrate its potential to be used as a microwave oscillator in multiband, multistandard radios. © 2014 Wiley Periodicals, Inc. Microwave Opt Technol Lett 56:2092–2095, 2014

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