Gigahertz‐clocked InGaAs/InP single photon avalanche photodiode with tunable gating frequency | Zendy

Zhoufeng Ying | Zendy; Xuping Zhang | Zendy; Shun Wang | Zendy; Fei Xie | Zendy; Yixin Zhang | Zendy

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Gigahertz‐clocked InGaAs/InP single photon avalanche photodiode with tunable gating frequency

Author(s) -

Zhoufeng Ying,

Xuping Zhang,

Shun Wang,

Fei Xie,

Yixin Zhang

Publication year - 2014

Publication title -

microwave and optical technology letters

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 0.304

H-Index - 76

eISSN - 1098-2760

pISSN - 0895-2477

DOI - 10.1002/mop.28439

Subject(s) - avalanche photodiode , gating , optoelectronics , microwave , photodetector , photodiode , materials science , single photon avalanche diode , optics , physics , detector , engineering , telecommunications , physiology , biology

We demonstrate a gigahertz‐clocked InGaAs/InP single‐photon avalanche photodiode with tunable gating frequency. Our design features a self‐gate‐cancelation circuit that enables the user to freely tune the gating frequency within a designated range. © 2014 Wiley Periodicals, Inc. Microwave Opt Technol Lett 56:1742–1744, 2014

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