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Gigahertz‐clocked InGaAs/InP single photon avalanche photodiode with tunable gating frequency
Author(s) -
Zhoufeng Ying,
Xuping Zhang,
Shun Wang,
Fei Xie,
Yixin Zhang
Publication year - 2014
Publication title -
microwave and optical technology letters
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.304
H-Index - 76
eISSN - 1098-2760
pISSN - 0895-2477
DOI - 10.1002/mop.28439
Subject(s) - avalanche photodiode , gating , optoelectronics , microwave , photodetector , photodiode , materials science , single photon avalanche diode , optics , physics , detector , engineering , telecommunications , physiology , biology
We demonstrate a gigahertz‐clocked InGaAs/InP single‐photon avalanche photodiode with tunable gating frequency. Our design features a self‐gate‐cancelation circuit that enables the user to freely tune the gating frequency within a designated range. © 2014 Wiley Periodicals, Inc. Microwave Opt Technol Lett 56:1742–1744, 2014