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A high‐performance low‐noise amplifier for 71–76, 76–77, and 77–81 GHz communication systems in 90‐NM CMOS
Author(s) -
Lin YoSheng,
Wang ChienChin,
Lee GuanLin,
Chen ChihChung
Publication year - 2014
Publication title -
microwave and optical technology letters
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.304
H-Index - 76
eISSN - 1098-2760
pISSN - 0895-2477
DOI - 10.1002/mop.28413
Subject(s) - wideband , cmos , noise figure , low noise amplifier , amplifier , electrical engineering , bandwidth (computing) , microwave , extremely high frequency , physics , impedance matching , electronic engineering , optoelectronics , engineering , materials science , telecommunications , electrical impedance
A low power and wideband three‐stage millimeter‐wave low‐noise amplifier (LNA) for 71–76 GHz high‐speed point‐to‐point wireless link, and 76–77 GHz long‐range and 77–81 GHz short‐range automotive radars using standard 90‐nm CMOS technology is reported. T‐match technique is utilized to achieve simultaneously wideband input and output impedance matching, wideband power gain (S 21 ) and wideband noise figure (NF) at W‐band. The LNA consumes 21.1 mW, achieving S 11 better than −10 dB for frequencies 62.3–82.4 GHz, S 22 better than −10 dB for frequencies 62.8–84.6 GHz, S 12 better than −29 dB for frequencies 72–84 GHz, and group delay variation smaller than ±6.5 ps for frequencies 70–90 GHz. Additionally, high and flat S 21 of 13.1 ± 1.5 dB is achieved for frequencies 72–84 GHz, which means the corresponding 3‐dB bandwidth is 12 GHz. Furthermore, the LNA achieves minimum NF of 6.2 dB at 78 GHz and NF of 6.8 ± 0.6 dB for frequencies 75–82 GHz, one of the best NF results ever reported for a W‐band CMOS LNA. © 2014 Wiley Periodicals, Inc. Microwave Opt Technol Lett 56:1673–1680, 2014