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Novel wideband high‐efficiency high‐power amplifier using microstrip radial stub for 4G communication systems
Author(s) -
Wang Zhebin,
Park ChanWang
Publication year - 2014
Publication title -
microwave and optical technology letters
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.304
H-Index - 76
eISSN - 1098-2760
pISSN - 0895-2477
DOI - 10.1002/mop.28369
Subject(s) - wideband , stub (electronics) , microstrip , amplifier , electronic engineering , microwave , high electron mobility transistor , electrical engineering , engineering , materials science , bandwidth (computing) , telecommunications , transistor , voltage
This article presents a novel wideband GaN HEMT power amplifier (PA) using microstrip radial stub (MRS) to realize wideband harmonic suppression. The angle and the bottom length of MRS are analyzed. One wideband PA is fabricated using MRS in both input and output matching networks to demonstrate this wideband method. © 2014 Wiley Periodicals, Inc. Microwave Opt Technol Lett 56:1412–1418, 2014