Premium
A wide range monolithic pHEMT SPDT switch
Author(s) -
Menbari Babak,
Dousti Massoud,
Hajghassem Hassan
Publication year - 2014
Publication title -
microwave and optical technology letters
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.304
H-Index - 76
eISSN - 1098-2760
pISSN - 0895-2477
DOI - 10.1002/mop.28338
Subject(s) - high electron mobility transistor , transistor , cutoff frequency , electrical engineering , materials science , monolithic microwave integrated circuit , optoelectronics , insertion loss , capacitor , amplifier , engineering , cmos , voltage
ABSTRACT In this study, we propose the design, fabrication, and measurement results of a −6 V single pole double throw (SPDT) switch in the frequency band of DC‐20 GHz. We use a pseudomorphic high electron mobility transistor (pHEMT) GaAs technology. This technology has a gate width of 0.15 μm and a cutoff frequency of 85 GHz. A high yield and good performance switch based on pHEMT transistor is presented for using in SPDT circuit. In this method, we can reduce the off mode capacitor of transistor (C off ) and optimize the transistor in switch mode. Therefore, this method increases the transistor isolation in “off” mode with no change in the resistance of transistor in “on” mode (R on ). Measurement results show that the insertion loss is 1 dB with variation of ±0.1 dB in the frequency bandwidth and its isolation is better than 35 dB. The linear power range of the circuit is 28 dBm. The chip size is 0.2 mm 2 and very low power consumption of 25 μ w is achieved. © 2014 Wiley Periodicals, Inc. Microwave Opt Technol Lett 56:1454–1458, 2014