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A wide‐locking ÷3 BiCMOS injection‐locked frequency divider using internal feedback
Author(s) -
Jang ShengLyang,
Hsieh JenHsiang,
Juang MiinHorng
Publication year - 2014
Publication title -
microwave and optical technology letters
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.304
H-Index - 76
eISSN - 1098-2760
pISSN - 0895-2477
DOI - 10.1002/mop.28115
Subject(s) - frequency divider , electrical engineering , engineering , heterojunction bipolar transistor , microwave , signal (programming language) , port (circuit theory) , bicmos , voltage , electronic oscillator , electronic engineering , voltage controlled oscillator , power dividers and directional couplers , telecommunications , transistor , computer science , bipolar junction transistor , programming language
A wide locking range divide‐by‐3 injection‐locked frequency divider (ILFD) using a standard 0.18‐μm SiGe 3P6M BiCMOS process is presented. The ÷3 ILFD circuit is realized with an n‐core MOS LC‐tank oscillator. The ILFD uses a push‐push signal circuit and two linear mixers with one radio‐frequency injection input port and one push‐push signal input port. An HBT is used to amplify the push‐push signal and extend locking range. The core power consumption of the ILFD core is 13.2 mW at the drain‐source voltage of 0.8 V. The divider's free‐running frequency is tunable from 3.079 to 3.163 GHz and at the incident power of 0 dBm, the locking range is 19.28%, from 8.9 to 10.8 GHz. © 2014 Wiley Periodicals, Inc. Microwave Opt Technol Lett 56:493–497, 2014