Premium
Simulation technique for ACLR of a class‐S power amplifier with a delta‐sigma modulator
Author(s) -
Lee Sung Jun,
Jung Jae Ho,
Lee Kwang Chun
Publication year - 2014
Publication title -
microwave and optical technology letters
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.304
H-Index - 76
eISSN - 1098-2760
pISSN - 0895-2477
DOI - 10.1002/mop.28109
Subject(s) - amplifier , baseband , adjacent channel , delta sigma modulation , electronic engineering , microwave , leakage (economics) , engineering , power (physics) , modulation (music) , distortion (music) , electrical engineering , physics , telecommunications , cmos , acoustics , quantum mechanics , economics , macroeconomics
A simulation technique for an adjacent channel leakage ratio (ACLR) of a class‐S power amplifier (PA) with a delta‐sigma modulator is proposed. This technique is based on three basic points. The first is a proper baseband signal, which must provide a fairly better ACLR than the target value of a PA as well as a tolerable total amount of time that can be handled by a transient circuit simulation. The second point is a carrier frequency adjustment for the observations free from spectrum leakage distortion due to a limited total amount of simulated time. The last is an ACLR calculation using only a steady‐state output. © 2014 Wiley Periodicals, Inc. Microwave Opt Technol Lett 56:462–465, 2014
Accelerating Research
Robert Robinson Avenue,
Oxford Science Park, Oxford
OX4 4GP, United Kingdom
Address
John Eccles HouseRobert Robinson Avenue,
Oxford Science Park, Oxford
OX4 4GP, United Kingdom