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A compact, 36 to 72 GHz 15.8 dBm power amplifier with 66.7% fractional bandwidth in 45 nm SOI CMOS
Author(s) -
Tai Wei,
Ricketts David S.
Publication year - 2014
Publication title -
microwave and optical technology letters
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.304
H-Index - 76
eISSN - 1098-2760
pISSN - 0895-2477
DOI - 10.1002/mop.28062
Subject(s) - wideband , cascode , cmos , amplifier , electrical engineering , dbm , silicon on insulator , bandwidth (computing) , extremely high frequency , v band , power bandwidth , optoelectronics , physics , materials science , engineering , rf power amplifier , telecommunications , silicon
A 36 to 72 GHz wideband power amplifier (PA) in 45‐nm silicon‐on‐insulator CMOS is presented. The PA adopts a two‐stage cascode topology, in which counterposed resonances in the matching networks enable a 3‐dB output power bandwidth of 36 GHz. This bandwidth represents a 66.7% fractional bandwidth—a 1.8X improvement over previously reported CMOS V‐band PAs. At 62 GHz, the PA achieves a peak output power of 15.8 dBm, a gain of 16.9 dB, and 9.4% power‐added efficiency using a 2.2‐V supply. The PA has the largest output power and smallest die area among reported wideband (BW > 30%) millimeter‐wave PAs in CMOS. © 2014 Wiley Periodicals, Inc. Microwave Opt Technol Lett 56:166–169, 2014