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A New Method to Determine Parasitic Capacitances for HEMTs
Author(s) -
Shen Li,
Chen Bo,
Fan Caiyun,
Gao Jianjun
Publication year - 2013
Publication title -
microwave and optical technology letters
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.304
H-Index - 76
eISSN - 1098-2760
pISSN - 0895-2477
DOI - 10.1002/mop.27990
Subject(s) - high electron mobility transistor , parasitic capacitance , capacitance , microwave , parasitic extraction , optoelectronics , electrical engineering , electronic engineering , materials science , engineering , port (circuit theory) , transistor , chemistry , telecommunications , voltage , electrode
A new direct extraction method for the determination of the parasitic capacitances of HEMTs is presented in this article. This method is based on a physically meaningful depletion‐layer model and the theoretical analysis of the two‐port network for the pinch‐off cold FETs. The main advantage of this approach is that parasitic capacitance C pg , C pd , and C pdg can be extracted under different pinch‐off conditions. Good agreement is obtained between modeled and measured results for 2 × 20 μm gate width HEMT (number of gate fingers × unit gate width). © 2013 Wiley Periodicals, Inc. Microwave Opt Technol Lett 55:3005–3007, 2013
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