Premium
Design of Low‐Power and High‐Gain CMOS LNA with Current‐Reused Topology
Author(s) -
Wang Sen,
Lin WenJie
Publication year - 2013
Publication title -
microwave and optical technology letters
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.304
H-Index - 76
eISSN - 1098-2760
pISSN - 0895-2477
DOI - 10.1002/mop.27889
Subject(s) - cmos , electrical engineering , amplifier , power gain , low noise amplifier , noise figure , topology (electrical circuits) , electronic engineering , return loss , engineering , physics , antenna (radio)
This article presents the design of low‐power and high‐gain X‐band CMOS low‐noise amplifier (LNA) using a current‐reused (CR) topology. The proposed LNA is equivalent to a three common‐source stage cascade amplifier. With the CR technique, the amplifier is benefit to boost power gain without increasing power dissipation. The CR‐LNA is fabricated by a standard 0.18‐μm CMOS process with a chip size of 0.59 mm. The quiescent current of the circuit is merely 4.2 mA from a power supply of 1.3 V. Measured results demonstrate 20.4‐dB gain, 3.7‐dB noise figure , 11‐dB input return loss, 18‐dB output return loss, −32‐dBm input Pid B , and −18.3‐dBm IIP3 at 10.7 GHz, respectively. © 2013 Wiley Periodicals, Inc. Microwave Opt Technol Lett 55:2429–2431, 2013