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0.013 mm 2 and Low‐power 10 Gb/s Transimpedance Amplifier for Short‐reach Optical Interconnects
Author(s) -
Nguyen Nga T. H.,
Ukaegbu Ikechi Augustine,
Sangirov Jamshid,
Cho Mu Hee,
Lee Tae Woo,
Park Hyo Hoon
Publication year - 2013
Publication title -
microwave and optical technology letters
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.304
H-Index - 76
eISSN - 1098-2760
pISSN - 0895-2477
DOI - 10.1002/mop.27886
Subject(s) - transimpedance amplifier , cascode , cmos , electrical engineering , photodiode , amplifier , optoelectronics , bandwidth (computing) , figure of merit , capacitance , materials science , gain–bandwidth product , physics , electronic engineering , rf power amplifier , engineering , operational amplifier , telecommunications , electrode , quantum mechanics
A transimpedance amplifier (TIA) has been designed and implemented for short‐reach optical interconnect applications. The TIA, which is based on the regulated cascode technique, is implemented with a bandwidth enhancement technique, where capacitive degeneration and resistive feedback has been exploited in a 0.13 μm CMOS technology, while maintaining a small chip area and low power consumption. The TIA showed a measured transimpedance gain of 51dBΩ and works up to 10 Gb/s in the presence of 0.3 pF input photodiode capacitance. It occupies an active area of 0.013 mm 2 with a power dissipation of 4.3 mW. The proposed TIA achieved high gain‐bandwidth product per DC power (GBP/DC) figure of merit of 589 GHzΩ/mW with an input referred noise of 20 pA/√Hz. © 2013 Wiley Periodicals, Inc. Microwave Opt Technol Lett 55:2484–2487, 2013
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