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A 3.1–10.6‐GHz Current‐Reused CMOS Ultra‐Wideband Low‐Noise Amplifier Using Self‐Forward Body Bias and Forward Combining Techniques
Author(s) -
Wu ChiaHsing,
Lin YoSheng,
Wang ChienChin
Publication year - 2013
Publication title -
microwave and optical technology letters
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.304
H-Index - 76
eISSN - 1098-2760
pISSN - 0895-2477
DOI - 10.1002/mop.27834
Subject(s) - noise figure , intermodulation , low noise amplifier , wideband , cmos , figure of merit , linearity , amplifier , electrical engineering , ultra wideband , return loss , noise (video) , physics , electronic engineering , engineering , optoelectronics , computer science , antenna (radio) , artificial intelligence , image (mathematics)
A 3.1–10.6‐GHz ultra‐wideband low‐noise amplifier (UWB LNA) with excellent phase linearity property (group‐delay variation is only ±19.46 ps across the whole band) using standard 0.18‐µm CMOS technology is reported. Current reused, self‐forward body bias and forward combining techniques are used to achieve low power and high‐power gain (S 21 ). Both high and flat S 21 and low and flat noise figure (NF) frequency responses are achieved by tuning the pole frequencies and pole quality factors of the second‐order gain and NF frequency responses to approximate the maximally flat condition simultaneously. The LNA dissipates 6.93‐mW power and achieves NF of 3.76 at 10 GHz. In addition, the LNA achieves input return loss (S 11 ) smaller than −10.6 dB, and high and flat S 21 of 11.02 ± 0.47 dB over the 3.1–10.6‐GHz band. The corresponding figure of merit (FOM) is 3.11 GHz/mW, one of the lowest FOMs ever reported for a 3.1–10.6 GHz CMOS UWB LNA. The measured input third‐order intermodulation point (IIP3) is −3.6 dBm at 6 GHz. © 2013 Wiley Periodicals, Inc. Microwave Opt Technol Lett 55:2296–2302, 2013