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High‐Performance W‐Band Mhemt Low Noise Amplifier using Millimeter‐Wave Tuner System
Author(s) -
An Dan,
Rhee JinKoo
Publication year - 2013
Publication title -
microwave and optical technology letters
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.304
H-Index - 76
eISSN - 1098-2760
pISSN - 0895-2477
DOI - 10.1002/mop.27799
Subject(s) - noise figure , low noise amplifier , extremely high frequency , tuner , v band , amplifier , optoelectronics , cutoff frequency , microwave , electrical engineering , materials science , transistor , noise (video) , monolithic microwave integrated circuit , physics , telecommunications , cmos , radio frequency , engineering , computer science , voltage , artificial intelligence , image (mathematics)
In this article, we report a high‐performance W‐band metamorphic high electron‐mobility transistor (MHEMT) low noise amplifier (LNA) using millimeter‐wave tuner system. The MHEMT devices for millimeter‐wave monolithic integrated circuit LNA exhibited the current gain cutoff frequency (f T ) and maximum oscillation frequency (f max ) were 195 and 305 GHz, respectively. The accurate noise parameter was extracted using millimeter‐wave tuner system to design the W‐band LNA. The fabricated W‐band LNA represented S 21 gain of 7.42 dB at 94 GHz and noise figure of 2.8 dB at 94.2 GHz. © 2013 Wiley Periodicals, Inc. Microwave Opt Technol Lett 55:2157–2160, 2013