A Wideband 100 GHz Low Noise Amplifier with Slow‐Wave CPW in 65 nm LP CMOS | Zendy

Park JungDong | Zendy; Niknejad Ali M. | Zendy

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A Wideband 100 GHz Low Noise Amplifier with Slow‐Wave CPW in 65 nm LP CMOS

Author(s) -

Park JungDong,

Niknejad Ali M.

Publication year - 2013

Publication title -

microwave and optical technology letters

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 0.304

H-Index - 76

eISSN - 1098-2760

pISSN - 0895-2477

DOI - 10.1002/mop.27671

Subject(s) - wideband , coplanar waveguide , low noise amplifier , noise figure , amplifier , cmos , electrical engineering , materials science , optoelectronics , impedance matching , microwave , noise (video) , electronic engineering , engineering , electrical impedance , telecommunications , computer science , artificial intelligence , image (mathematics)

A 100 GHz low noise amplifier (LNA) utilizing the slow‐wave coplanar waveguide (SW‐CPW) is presented in 65 nm low power (LP) CMOS process. A multistage wideband LNA is designed with minimal power gain degradation by carefully selecting degeneration inductance. Interstage matching networks are implemented with characterized SW‐CPW which has effective permittivity (ɛ eff ) equal to 13. The fabricated 100 GHz LNA achieves 8.8 dB of power gain and 6.9 dB of the noise figure including RF pads. © 2013 Wiley Periodicals, Inc. Microwave Opt Technol Lett 55:1954–1957, 2013

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