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A Wideband 100 GHz Low Noise Amplifier with Slow‐Wave CPW in 65 nm LP CMOS
Author(s) -
Park JungDong,
Niknejad Ali M.
Publication year - 2013
Publication title -
microwave and optical technology letters
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.304
H-Index - 76
eISSN - 1098-2760
pISSN - 0895-2477
DOI - 10.1002/mop.27671
Subject(s) - wideband , coplanar waveguide , low noise amplifier , noise figure , amplifier , cmos , electrical engineering , materials science , optoelectronics , impedance matching , microwave , noise (video) , electronic engineering , engineering , electrical impedance , telecommunications , computer science , artificial intelligence , image (mathematics)
A 100 GHz low noise amplifier (LNA) utilizing the slow‐wave coplanar waveguide (SW‐CPW) is presented in 65 nm low power (LP) CMOS process. A multistage wideband LNA is designed with minimal power gain degradation by carefully selecting degeneration inductance. Interstage matching networks are implemented with characterized SW‐CPW which has effective permittivity (ɛ eff ) equal to 13. The fabricated 100 GHz LNA achieves 8.8 dB of power gain and 6.9 dB of the noise figure including RF pads. © 2013 Wiley Periodicals, Inc. Microwave Opt Technol Lett 55:1954–1957, 2013