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Low power, high gain, low noise amplifier (LNA) for ultra wide‐band applications
Author(s) -
Iji Ayobami,
Zhu Xie,
Heimlich Michael
Publication year - 2013
Publication title -
microwave and optical technology letters
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.304
H-Index - 76
eISSN - 1098-2760
pISSN - 0895-2477
DOI - 10.1002/mop.27588
Subject(s) - low noise amplifier , noise figure , linearity , electrical engineering , electronic engineering , amplifier , cmos , power gain , transceiver , engineering
One of the important components of a receiver is the low noise amplifier (LNA). The challenges of LNA design include ability to achieve high gain, low noise figure, and better linearity at low power consumption within the required frequency. In this article, our design is based on Impulse Response (IR) Ultra Wide‐Band (UWB) transceiver operating at 3.1–4.6 GHz. Hence, the LNA designed has been optimized for low noise figure, considerably high gain and better linearity at low power consumption, which make it suitable for implantable radio application. The process technology used here is 0.25 μm CMOS Silanna process. © 2013 Wiley Periodicals, Inc. Microwave Opt Technol Lett 55:1399–1401, 2013; View this article online at wileyonlinelibrary.com. DOI 10.1002/mop.27588