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DC‐bias and oscillation‐amplitude dependent frequency‐tuning characteristics of varactor‐switching dual‐band CMOS VCOs
Author(s) -
Jang ShengLyang,
Jain Sanjeev,
Huang JhinFang,
Hsue ChingWen
Publication year - 2013
Publication title -
microwave and optical technology letters
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.304
H-Index - 76
eISSN - 1098-2760
pISSN - 0895-2477
DOI - 10.1002/mop.27574
Subject(s) - varicap , resonator , oscillation (cell signaling) , cmos , voltage controlled oscillator , lc circuit , multi band device , optoelectronics , amplitude , voltage , electrical engineering , materials science , biasing , resonance (particle physics) , microwave , physics , capacitance , telecommunications , engineering , electrode , capacitor , optics , chemistry , biochemistry , quantum mechanics , antenna (radio) , particle physics
This article studies the bias and oscillation‐amplitude dependent RF tuning property of varactor‐switching dual‐band voltage‐controlled oscillators (VCOs). The dual‐resonance LC‐tank n‐core and p‐core VCOs have been fabricated using 0.18 μm CMOS technology, and they use dual‐resonance LC resonator consisted of a parallel‐tuned LC resonator and a series resonant resonator. The accumulation‐mode MOS varactors are used. The RF circuit parameters such as oscillation frequency, tuning range, and transition frequency between low‐band and high band as a function of varactor bias, supply voltage, and oscillation amplitude are examined experimentally. © 2013 Wiley Periodicals, Inc. Microwave Opt Technol Lett 55:1389–1393, 2013; View this article online at wileyonlinelibrary.com. DOI 10.1002/mop.27574