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Millimeter‐wave INP DHBT power amplifier based on power‐optimized cascode configuration
Author(s) -
Johansen Tom K.,
Yan Lei,
Dupuy JeanYves,
Nodjiadjim Virginie,
Konczykowska Agnieszka,
Riet Muriel
Publication year - 2013
Publication title -
microwave and optical technology letters
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.304
H-Index - 76
eISSN - 1098-2760
pISSN - 0895-2477
DOI - 10.1002/mop.27477
Subject(s) - cascode , amplifier , electrical engineering , materials science , power (physics) , heterojunction bipolar transistor , extremely high frequency , common emitter , microwave , transistor , power added efficiency , optoelectronics , electronic engineering , engineering , bipolar junction transistor , rf power amplifier , physics , telecommunications , cmos , voltage , quantum mechanics
This letter describes the use of a power‐optimized cascode configuration for obtaining maximum output power at millimeter‐wave (mm‐wave) frequencies for a two‐way combined power amplifier (PA). The PA has been fabricated in a high‐speed InP double heterojunction bipolar transistor technology and has a total active emitter area of 68.4 μm2. The experimental results demonstrate a small signal gain of 9.8 dB and saturated output power of more than 18.6 dBm at 72 GHz with a peak power‐added efficiency of 12%. The benefits of the power optimized cascode configuration over the standard cascode configuration at mm‐wave frequencies are confirmed by both simulations and experimental results. © 2013 Wiley Periodicals, Inc. Microwave Opt Technol Lett 55:1178–1182, 2013; View this article online at wileyonlinelibrary.com. DOI 10.1002/mop.27477
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