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A highly attenuative CMOS LNA at 5–6 GHz using negative G M circuit for UWB applications
Author(s) -
Koirala Nischal,
Anand A.,
Pokharel Ramesh K.,
Kanaya H.,
Yoshida K.
Publication year - 2013
Publication title -
microwave and optical technology letters
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.304
H-Index - 76
eISSN - 1098-2760
pISSN - 0895-2477
DOI - 10.1002/mop.27464
Subject(s) - inductor , cmos , low noise amplifier , noise figure , electrical engineering , return loss , attenuation , amplifier , microwave , rfic , electronic engineering , materials science , physics , engineering , telecommunications , antenna (radio) , optics , voltage
Abstract This paper presents a UWB low noise amplifier (LNA) for 3.1–10.6 GHz applications, with an excellent attenuation at 5–6 GHz for rejecting the wireless local area network (WLAN) interference. A method of canceling the on‐chip inductive resistance has been employed in this work to make the inductor an extremely low loss inductor with a very high quality factor. The fully integrated UWB LNA is designed in the CMOS 0.18 μm Taiwan Semiconductor Manufacturing Company (TSMC) technology. Measurement results show that the LNA achieves attenuation of up to 39 dB at 5.4 GHz, while the 1 dB power gain is 10 dB. The measured return losses (S 11 and S 22 ) are better than −7.4 dB while the noise figure is 5–6.1 dB in the range of operation. The measured input P 1dB and IIP 3 measured at 6.5 GHz are −12.2 and 2 dBm, respectively. The designed LNA occupies an area of 1.105 × 0.68 mm 2 . © 2012 Wiley Periodicals, Inc. Microwave Opt Technol Lett 55:894–899, 2013; View this article online at wileyonlinelibrary.com. DOI 10.1002/mop.27464