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Applying line‐series‐shunt calibration to one‐tier on‐wafer device de‐embedding up to millimeter waves
Author(s) -
Huang ChienChang,
Chen YuChuan
Publication year - 2013
Publication title -
microwave and optical technology letters
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.304
H-Index - 76
eISSN - 1098-2760
pISSN - 0895-2477
DOI - 10.1002/mop.27445
Subject(s) - high electron mobility transistor , resistor , calibration , wafer , extremely high frequency , microwave , electronic engineering , transmission line , electrical engineering , optoelectronics , shunt (medical) , engineering , electrical impedance , transistor , materials science , physics , telecommunications , voltage , quantum mechanics , medicine , cardiology
In this article, a one‐tier on‐wafer device de‐embedding methodology up to millimeter wave regions is presented by using the line‐series‐shunt calibration technique. All the calibration and de‐embedding processes are accomplished without the needs of impedance‐standard‐substrate (ISS), which defines the reference impedance in the conventional on‐wafer measurements. Three on‐chip standards, namely a section of transmission line (TL), a series resistor, and a shunt resistor, are utilized to perform the calibration where the characteristics of the standards need not to be known in advance and can be evaluated through the self‐calibration procedure. The proposed method is examined by the GaAs 0.15 μm pseudomorphic high electron mobility transistor (pHEMT) device in the measured frequencies from 2 GHz to 90 GHz. © 2012 Wiley Periodicals, Inc. Microwave Opt Technol Lett 55:744–747, 2013; View this article online at wileyonlinelibrary.com. DOI 10.1002/mop.27445